midium power transistors (120v / 700ma) 2SCR372P ? structure ? dimensions (unit : mm) npn silicon epitaxial planar transistor ? features low saturation voltage v ce (sat) = 0.3v (max.) (i c / i b = 500ma / 50ma) ? applications driver ? inner circuit (unit : mm) package taping code t100 basic ordering unit (pieces) 1000 2SCR372P ? hfe values are classified follows : item q r hfe 120 to 270 180 to 390 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 6v dc i c 0.7 a pulsed i cp 1.4 a p d 0.5 w p d 2w junction temperature t j 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw=10ms, single pulse *2 each terminal mounted on a recommended land. *3 mounted on a ceramic board. (40x40x0.7mm) ? packaging specifications type parameter collector current power dissipation mpt3 (1) (2) (3) *1 *2 *3 abbreviated symbol : gx (1) base (2) collector (3) emitter (1) (3 ) (2 ) (1) base (2) collector (3) emitter 1/4 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
2SCR372P ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 120 - - v i c = 1 a collector-base breakdown voltage bv cbo 120 - - v i c = 100a emitter-base breakdown voltage bv ebo 6- -v i e = 100a collector cut-off current i cbo --1 ? a v cb = 100v emitter cut-off current i ebo --1 ? a v eb = 4v collector-emitter staturation voltage v ce(sat) - 100 300 mv i c = -500ma, i b = 50ma dc current gain h fe 120 - 390 - v ce = 5v, i c = 100ma -8 collector output capacitance c ob parameter mhz 220 - transition frequency f t - pf - v ce = 5v i e =-300ma, f=100mhz conditions v cb = 10v, i e =0a f=1mhz 2/4 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
2SCR372P ? electrical characteristic curves (ta=25 ? c) 1 10 100 1000 0 0.5 1 1.5 collector current : i c [ma] base to emitter voltage :v be [v] fig.1 ground emitter propagation characteristics v ce =5v pulsed ta=125 c 75 c 25 c - 40 c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.0 1.0 2.0 collector current : i c [a] colector to emitter voltage:v ce [v] fig.2 typical output characteristics 1.2ma 0.6ma 0.4ma i b =0.2ma 1.6ma 2ma ta=25 c 0.8ma 10 100 1000 1 10 100 1000 dc current gain :hfe collector current :i c [ma] fig.3 dc current gain vs. collector current( ) ta=25 c pulsed v ce =5v 3v 10 100 1000 1 10 100 1000 dc current gain :hfe collector current :i c [ma] fig.4 dc current gain vs. collector current( ) v ce =5v pulsed ta=125 c 75 c 25 c - 40 c 0.01 0.1 1 1 10 100 1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.5 collector - emitter saturation voltage vs. collector current( ) i c /i b =20 10 ta=25 c pulsed 0.01 0.1 1 1 10 100 1000 collector saturation voltage :v ce (sat)[v] collector current :i c [ma] fig.6 collector - emitter saturation voltage vs. collector current( ) i c /i b =10 pulsed ta=125 c 75 c 25 c - 40 c 3/4 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
2SCR372P 1 10 100 1000 0.1 1 10 100 collector output capacitance : cob(pf) emitter input capacitance : cib(pf) collector - base voltage : v cb (v) emitter - base voltage : v eb (v) fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs.collector - base voltage ta=25 c f=1mhz i c =0a cob cib 10 100 1000 10 100 1000 transition frequency :f t [mhz] emitter current :i e [ma] fig8. gain bandwidth product vs. emitter current ta=25 c v ce =5v f=100mhz -0.001 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 -1000 collector current : i c (a) collector to emitter voltage :v ce (v) fig9. safe operating area ta=25 c single non repetitive pulse dc mounted on a recommended land) 100ms 10ms 1ms dc mounted on a ceramic board) 4/4 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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